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| Low VCE(sat) IGBT High Speed IGBT Short Circuit SOA Capability VCES IXSH/IXSM IXSH/IXSM 30N60 30N60A 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0 V Symbol VCES VCGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TJ = 125C, RG = 4.7 Clamped inductive load, L = 100 H VGE = 15 V, VCE = 360 V, TJ = 125C RG = 33 , non repetitive TC = 25C Maximum Ratings 600 600 20 30 50 30 100 ICM = 60 @ 0.8 VCES 10 200 -55 ... +150 150 -55 ... +150 V V V V A A A A s TO-247 AD (IXSH) G C E TO-204 AE (IXSM) C W C C C G = Gate, E = Emitter, C = Collector, TAB = Collector Features l l Mounting torque 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l l l Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 5 TJ = 25C TJ = 125C 8 100 1 100 30N60 30N60A 2.5 3.0 V V A mA nA V V l International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast Fall Time for switching speeds up to 20 kHz BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 A, VGE = 0 V = 2.5 mA, VCE = VGE Applications l l l VCE = 0.8 VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V AC motor speed control Uninterruptible power supplies (UPS) Welding Advantages l l Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) High power density (c) 1998 IXYS All rights reserved 91549H (9/98) IXSH 30N60 IXSM 30N60 IXSH 30N60A IXSM 30N60A Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 7 13 100 2760 VCE = 25 V, VGE = 0 V, f = 1 MHz 240 51 110 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 34 47 Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 H VCE = 0.8 VCES, RG = 4.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 H VCE = 0.8 VCES, RG = 4.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG 30N60 30N60A 30N60 30N60A 30N60 30N60A 30N60 30N60A 30N60 30N60A 60 130 400 400 200 5.0 2.5 60 130 1.0 540 1000 340 525 600 1500 340 700 12 6 150 45 63 S A pF pF pF nC nC nC ns ns ns ns ns mJ mJ ns ns mJ ns ns ns ns mJ mJ 0.63 K/W 0.25 K/W TO-204AE Outline 1 = Gate 2 = Collector 3 = Emitter Tab = Collector TO-247 AD Outline gfs IC(on) Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % VGE = 15 V, VCE = 10 V IXSH 30N60 and IXSH 30N60A characteristic curves are located on the IXSH 30N60U1 and IXSH 30N60AU1 data sheets. 1 = Gate 2 = Emitter Case = Collector IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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